2N2857 Folha de dados(PDF) - Advanced Power Technology

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2N2857 Folha de dados (PDF) - Advanced Power Technology

2N2857 Datasheet PDF - Advanced Power Technology


Nome de Peças	2N2857

Download	2N2857 Download

Tamanho do Arquivo	114.37 Kbytes

página	4 Pages

Fabricante Electrônico	ADPOW [Advanced Power Technology]

Página de início	http://www.advpowertech.com

Logo

Descrição Electrónicos

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N2857 Datasheet (PDF)

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2N2857 Datasheet PDF - Advanced Power Technology


Nome de Peças	2N2857

Download	2N2857 Click to download

Tamanho do Arquivo	114.37 Kbytes

página	4 Pages

Fabricante Electrônico	ADPOW [Advanced Power Technology]

Página de início	http://www.advpowertech.com

Logo

Descrição Electrónicos	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N2857 Folha de dados (HTML) - Advanced Power Technology

2N2857 Datasheet HTML 1Page - Advanced Power Technology

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2N2857 Detalhes do produto

DESCRIPTION:
The 2N2857 is a silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications.

Features
• Silicon NPN, To-72 packaged UHF Transistor
• 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC
• Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz

Nº de peça semelhante - 2N2857

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Seme LAB	2N2857	13Kb / 2P	NPN TRANSISTOR
List of Unclassifed Man...	2N2857	2Mb / 6P	GERMANIUM PNP TRANSISTORS
Semicoa Semiconductor	2N2857	30Kb / 1P	Chip Type 2C2857 Geometry 0011 Polarity NPN
Semicoa Semiconductor	2N2857	42Kb / 2P	Type 2N2857 Geometry 0011 Polarity NPN
Microsemi Corporation	2N2857	85Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Descrição semelhante - 2N2857

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Microsemi Corporation	BFR91	170Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFY90	84Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	2N6304	86Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF559	208Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5812	173Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF5943	174Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technolo...	MRF544	302Kb / 4P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	BFR90	120Kb / 5P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
	MRF581	282Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation	MRF581	162Kb / 6P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semi-Conduct...	BFR96	81Kb / 3P	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Sobre a Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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