These devices consist of two gallium arsenide infrared emitting
diodes optically coupled to two monolithic silicon phototransistor
detectors, in a surface mountable, small outline, plastic package. They
are ideally suited for high−density applications, and eliminate the need
for through−the−board mounting.

Features
• Closely Matched Current Transfer Ratios
• Minimum BVCEO of 70 V Guaranteed
– MOCD207M, MOCD208M, MOCD213M
• Minimum BVCEO of 30 V Guaranteed
– MOCD211M, MOCD217M
• Low LED Input Current Required for Easier Logic Interfacing
– MOCD217M
• Convenient Plastic SOIC−8 Surface Mountable Package Style, with
0.050″ Lead Spacing
• Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
• These are Pb−Free Devices

Applications
• Feedback Control Circuits
• Interfacing and Coupling Systems of Different Potentials and
Impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits