FEATURES
• 5-ch H-bridge circuits employing power MOS FET
• Low-voltage driving
LVDD = 2.7 to 3.6 V, AVDD = 4.5 to 5.5 V, VM12 = VM34 = VSHUTTER = VIRIS = 2.7 to 5.5 V
• Output on-state resistance: 2.0 Ω TYP., 3.0 Ω MAX. (4-ch H-bridge block, sum of top and bottom stage, VM = 5 V)
• PWM output (ch1 to ch4)
• Output current
DC current: ±0.3 A/ch (when each channel is used independently)
Peak current: ±0.7 A/ch (when each channel is used independently)
• 3-ch general-purpose operational amplifier
Input offset voltage: ±5 mV
Input voltage range: 0 to AVDD − 1.5 V
Output voltage range: 0.2 to AVDD − 0.2 V
• 1-ch current sink amplifier
Output current: 5 mA
• 1-ch 1/2VDD output amplifier
• IRIS driver block supporting linear driving
• Pre-driver amplifier of the IRIS driver block
• Undervoltage lockout circuit
Output circuit and amplifier stop at LVDD = 1.7 V TYP. or less.
• Overheat protection circuit
Operates at 150°C or more and shuts down the output circuit.
• Mounted on 48-pin plastic WQFN (7 x 7)