1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
 Low threshold voltage
 Very fast switching
 Trench MOSFET technology
 2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
 Relay driver
 High-speed line driver
 High-side load switch
 Switching circuits