1. Description
The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter
applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between
the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI
(Common Mode Transient Immunity) performance over 150 V/ns, providing reliable communication and
increased noise immunity while meeting the high voltages and fast switching speeds required in inverter
systems.
This device contains Gate drive circuit, Miller clamp circuit, and Soft turn-off circuit as well as several types
of protection circuits such as Overcurrent detection.

Features
On-chip Micro Isolator (isolated circuit)
➢ High voltage isolation: 3750Vrms, 1min
➢ High CMTI (Common Mode Transient Immunity): over 150V/ns
High output gate drive circuit
➢ Gate drive output peak current (Source / Sink): 10A typ. / 10A typ.
➢ On-chip active miller clamp
➢ Soft turn-off function
Various on-chip protection circuits
➢ Over current detection by DESAT (Desaturation Protection): 8.9V typ.
➢ On-chip under voltage lockout circuit (UVLO)
VCC1 (5 V system): 4.1V typ.
VCC2 (15 V system): 10V typ.
➢ Fault Alarm outputs on FOB pin and the latched fault status can be reset by RSTB pin
Operating temperature: - 40 to 125 °C (Junction temperature: 150 °C max)
AEC-Q100 Qualified (Grade 1)

Applications
Traction inverters for EV/HEV in automotive applications
DC-DC converters for EV/HEV in automotive applications
On-board charger for EV in automotive applications
Inverters and converters for industrial instruments, etc.
Note: The information contained in this document is the one that was obtained when the
document was issued and may be subject to change.