Description
Wolfspeed’s CMPA5585030F is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to Si
and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic
flanged package for optimal electrical and thermal performance.
Features
• 25 dB Small Signal Gain
• 30 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 1.00 x 0.385 inches
Applications
• Point to Point Radio
• Communications Radar
• Satellite Communication Uplink