Description
Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC contains a two-stage reactively matched
amplifier design approach enabling high power and power added efficiency to
be achieved in a 5mm x 5mm, surface mount (QFN package).
Features
• 33 dB Small Signal Gain
• 21 W Typical PSAT
• Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• 5 mm x 5 mm Total Product Size
Applications
• Civil and Military Pulsed
Radar Amplifiers