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74LVC1G00GV Folha de dados (PDF) - Nexperia B.V. All rights reserved

74LVC1G00GV Datasheet PDF - Nexperia B.V. All rights reserved
Nome de Peças 74LVC1G00GV
Download  74LVC1G00GV Download
Tamanho do Arquivo   256.38 Kbytes
página   16 Pages
Fabricante Electrônico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de início  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descrição Electrónicos Single 2-input NAND gate

74LVC1G00GV Datasheet (PDF)

Go To PDF Page Download Folha de dados
74LVC1G00GV Datasheet PDF - Nexperia B.V. All rights reserved

Nome de Peças 74LVC1G00GV
Download  74LVC1G00GV Click to download

Tamanho do Arquivo   256.38 Kbytes
página   16 Pages
Fabricante Electrônico  NEXPERIA [Nexperia B.V. All rights reserved]
Página de início  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved
Descrição Electrónicos Single 2-input NAND gate

74LVC1G00GV Folha de dados (HTML) - Nexperia B.V. All rights reserved


74LVC1G00GV Detalhes do produto

1. General description
The 74LVC1G00 is a single 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V
devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V
environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and
fall times. This device is fully specified for partial power down applications using IOFF. The IOFF
circuitry disables the output, preventing the potentially damaging backflow current through the
device when it is powered down.
2. Features and benefits
• Wide supply voltage range from 1.65 V to 5.5 V
• Overvoltage tolerant inputs to 5.5 V
• High noise immunity
• CMOS low power dissipation
• IOFF circuitry provides partial Power-down mode operation
• ±24 mA output drive (VCC = 3.0 V)
• Latch-up performance exceeds 250 mA
• Direct interface with TTL levels
• Complies with JEDEC standard:
• JESD8-7 (1.65 V to 1.95 V)
• JESD8-5 (2.3 V to 2.7 V)
• JESD8C (2.7 V to 3.6 V)
• JESD36 (4.5 V to 5.5 V)
• ESD protection:
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-A exceeds 200 V
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C




Nº de peça semelhante - 74LVC1G00GV

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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Descrição semelhante - 74LVC1G00GV

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
NXP Semiconductors
74LVC1G00 PHILIPS-74LVC1G00 Datasheet
86Kb / 15P
Single 2-input NAND gate
2004 Sep 07
logo
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NXP Semiconductors
74AUC1G00 PHILIPS-74AUC1G00 Datasheet
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2002 Nov 12
logo
ON Semiconductor
MC74HC1G00 ONSEMI-MC74HC1G00 Datasheet
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Single 2-Input NAND Gate
January, 2005 ??Rev. 9
logo
STMicroelectronics
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Apr-2004
logo
ON Semiconductor
NLU1G00 ONSEMI-NLU1G00 Datasheet
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April, 2008 ??Rev. 0
logo
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logo
ON Semiconductor
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November, 2018 ??Rev. 12
MC74VHC1G01 ONSEMI-MC74VHC1G01_18 Datasheet
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November, 2018 ??Rev. 17
MC74VHC1G00 ONSEMI-MC74VHC1G00_V01 Datasheet
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March, 2022 ??Rev. 26
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