Description
The NCE1102N uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 110V,ID = 2A
RDS(ON) <250mΩ @ VGS=10V (Typ:218mΩ)
RDS(ON) <310mΩ @ VGS=10V (Typ:260mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply