FEATURES:
• First-ln/First-Out Dual-Port memory—45MHz
• 64 x 5 organization
• Low-power consumption
— Active: 200mW (typical)
• RAM-based internal structure allows for fast fall-through time
• Asynchronous and simultaneous read and write
• Expandable by bit width
• Cascadable by word depth
• Half-Full and Almost-Full/Empty status flags
• High-speed data communications applications
• Bidirectional and rate buffer applications
• High-performance CMOS technology
• Available in plastic DIP and SOIC
• Green parts available, see ordering information