Features
• Fabricated using P6 SOI process technology
• Rail-to-rail operation
• No latch-up
• Low rDS(ON): <120Ω (maximum)
• Single supply operation: 3V to 5.5V
• Adjustable logic threshold control
• Cold sparing capable: -0.4V to 7V
• Analog overvoltage range: -0.4V to 7V
• Switch input off leakage: 120nA
• Transition times (tAHL): 70ns
• Break-before-make switching
• ESD protection ≥5kV (HBM)
• Passes NASA low outgassing specifications
• NiPdAu lead finish (Pb-free, Sn-free)
• Operating temperature range: -55°C to +125°C
• Radiation tolerance
○ Low dose rate (0.01rad(Si)/s): 30krad(Si)
○ SEL/SEB LETTH (V+ = 6.5V): 43MeV•cm2/mg
Applications
• Telemetry signal processing
• Harsh environments
○ Down-hole drilling