1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301NX.

1.2 Features
.. Low collector-emitter saturation voltage VCEsat
.. High collector current capability IC and ICM
.. High collector current gain (hFE) at high IC
.. High efficiency due to less heat generation
.. Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications
.. DC-to-DC conversion
.. MOSFET gate driving
.. Motor control
.. Charging circuits
.. Power switches (e.g. motors, fans)