Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200k RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9
Errors/Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 Rads (Si)/s
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate
Day (Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL
ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii  5μA at VOL, VOH