Description
The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features
 Based on Intel 6  6 DrMOS Specification.
 Built-in power MOS FET suitable for Desktop, Server application.
 Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
 Built-in driver circuit which matches the power MOS FET
 Built-in tri-state input function which can support a number of PWM controllers
 High-frequency operation (above 1 MHz) possible
 VIN operating-voltage range: 20 Vmax
 Large average output current (Max.40 A)
 Achieve low power dissipation
 Controllable driver: Remote on/off
 Support Mid-Voltage PWM signal to enter zero current detection
 Built-in Thermal Warning
 Built-in bootstrapping Switch
 Small package: QFN40 (6 mm  6 mm  0.95 mm)
 Terminal Pb-free/Halogen-free