SCTWA70N120G2V Folha de dados(PDF) - STMicroelectronics

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SCTWA70N120G2V Folha de dados (PDF) - STMicroelectronics

SCTWA70N120G2V Datasheet PDF - STMicroelectronics


Nome de Peças	SCTWA70N120G2V

Download	SCTWA70N120G2V Download

Tamanho do Arquivo	229.28 Kbytes

página	12 Pages

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

Descrição Electrónicos

Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A

SCTWA70N120G2V Datasheet (PDF)

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SCTWA70N120G2V Datasheet PDF - STMicroelectronics


Nome de Peças	SCTWA70N120G2V

Download	SCTWA70N120G2V Click to download

Tamanho do Arquivo	229.28 Kbytes

página	12 Pages

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

Descrição Electrónicos	Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A

SCTWA70N120G2V Folha de dados (HTML) - STMicroelectronics

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SCTWA70N120G2V Detalhes do produto

Features
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)

Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.

Nº de peça semelhante - SCTWA70N120G2V

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Inchange Semiconductor ...	SCTWA70N120G2V	294Kb / 2P	SiC N-Channel MOSFET
STMicroelectronics	SCTWA70N120G2V-4	218Kb / 12P	Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package 01-Jun-2021

Descrição semelhante - SCTWA70N120G2V

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	SCTH70N120G2V-7	378Kb / 14P	Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK?? package 26-May-2021
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020
	SCT020H120G3AG	362Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package 27-Sep-2022
	SCT025H120G3AG	369Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package 28-Nov-2022
	SCT040H120G3AG	386Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package 14-Oct-2022
	SCT070H120G3AG	396Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package 04-Apr-2023
	SCTH60N120G2-7AG	356Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package 02-Aug-2021
WOLFSPEED, INC.	CBB021M12FM3	2Mb / 12P	1200 V, 21 mΩ, Silicon Carbide, Full-Bridge Module Rev. 2, April 2023
WOLFSPEED, INC.	CCB021M12FM3	3Mb / 12P	1200 V, 21 mΩ, Silicon Carbide, Six-Pack Module Rev. 2, April 2023

Sobre a STMicroelectronics

A STMicroelectronics é um fabricante multinacional de eletrônicos e semicondutores com sede em Genebra, Suíça.

A empresa oferece uma ampla gama de produtos, incluindo microcontroladores, sensores, amplificadores de energia e circuitos integrados para várias aplicações nos mercados automotivo, industrial e de consumo.

Fundada em 1987, a STMicroelectronics possui operações em mais de 100 países e é uma das maiores empresas de semicondutores do mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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