STGYA120M65DF2AG Folha de dados(PDF) - STMicroelectronics

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STGYA120M65DF2AG Folha de dados (PDF) - STMicroelectronics

STGYA120M65DF2AG Datasheet PDF - STMicroelectronics


Nome de Peças	STGYA120M65DF2AG

Download	STGYA120M65DF2AG Download

Tamanho do Arquivo	2186.39 Kbytes

página	14 Pages

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Descrição Electrónicos

Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

STGYA120M65DF2AG Datasheet (PDF)

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STGYA120M65DF2AG Datasheet PDF - STMicroelectronics


Nome de Peças	STGYA120M65DF2AG

Download	STGYA120M65DF2AG Click to download

Tamanho do Arquivo	2186.39 Kbytes

página	14 Pages

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

Descrição Electrónicos	Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

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STGYA120M65DF2AG Detalhes do produto

Features
• AEC-Q101 qualified
• 6 μs of short-circuit withstand time
• VCE(sat) = 1.65 V (typ.) @ IC = 120 A
• Tight parameter distribution
• Safer paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal resistance
• Soft and very fast recovery antiparallel diode
• Maximum junction temperature: TJ = 175 °C

Applications
• Heating system
• HV battery disconnect and fire-off system
• Main inverter (electric traction)

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss
and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Nº de peça semelhante - STGYA120M65DF2AG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STGYA120M65DF2	958Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 120 A low loss 12-Aug-2016

Descrição semelhante - STGYA120M65DF2AG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STGF15M65DF2	910Kb / 15P	Trench gate field-stop IGBT M series, 650 V 15 A low loss 14-Oct-2015
	STGYA120M65DF2	958Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 120 A low loss 12-Aug-2016
	STGF30M65DF2	731Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package 11-Apr-2017
	STGYA50H120DF2	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package 12-Jan-2022
	STGYA50M120DF3	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package 01-Oct-2021
	STGYA75H120DF2	2Mb / 15P	Trench gate field-stop, 1200 V, 75 A, high-speed H series IGBT in a Max247 long leads package 13-Oct-2021
	STGP20M65DF2	520Kb / 16P	Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT 08-Oct-2018
	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package 04-May-2017
	STGSB200M65DF2AG	572Kb / 17P	Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package 29-Nov-2021
	GWA40MS120DF4AG	340Kb / 15P	Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package 01-Feb-2023

Sobre a STMicroelectronics

A STMicroelectronics é um fabricante multinacional de eletrônicos e semicondutores com sede em Genebra, Suíça.

A empresa oferece uma ampla gama de produtos, incluindo microcontroladores, sensores, amplificadores de energia e circuitos integrados para várias aplicações nos mercados automotivo, industrial e de consumo.

Fundada em 1987, a STMicroelectronics possui operações em mais de 100 países e é uma das maiores empresas de semicondutores do mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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