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STGWA80H65FBAG Folha de dados (PDF) - STMicroelectronics
STGWA80H65FBAG Datasheet PDF - STMicroelectronics
Nome de Peças STGWA80H65FBAG
Download  STGWA80H65FBAG Download
Tamanho do Arquivo   257.0 Kbytes
página   12 Pages
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descrição Electrónicos Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

STGWA80H65FBAG Datasheet (PDF)

Go To PDF Page Download Folha de dados
STGWA80H65FBAG Datasheet PDF - STMicroelectronics

Nome de Peças STGWA80H65FBAG
Download  STGWA80H65FBAG Click to download

Tamanho do Arquivo   257.0 Kbytes
página   12 Pages
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Descrição Electrónicos Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads

STGWA80H65FBAG Folha de dados (HTML) - STMicroelectronics


STGWA80H65FBAG Detalhes do produto

Features
AEC-Q101 qualified
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
VCE(sat) = 1.65 V (typ.) @ IC = 80 A
Tight parameters distribution
Safer paralleling
Low thermal resistance

Applications
PFC
High frequency converters

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.




Nº de peça semelhante - STGWA80H65FBAG

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STMicroelectronics		 STGWA80H65FB STMICROELECTRONICS-STGWA80H65FB Datasheet
1Mb / 18P		 Low thermal resistance
13-Jun-2014
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Descrição semelhante - STGWA80H65FBAG

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13-Jul-2016
STGFW20H65FB STMICROELECTRONICS-STGFW20H65FB Datasheet
1Mb / 20P		 Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
28-Aug-2014
STGY80H65DFB STMICROELECTRONICS-STGY80H65DFB Datasheet
1Mb / 22P		 Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
May 2015 Rev 6
STGWA20HP65FB2 STMICROELECTRONICS-STGWA20HP65FB2 Datasheet
373Kb / 15P		 Trench gate field-stop, 650 V, 20 A, high-speed HB2 series IGBT in a TO‑247 long leads package
11-May-2020
STGWA30H65DFB2 STMICROELECTRONICS-STGWA30H65DFB2 Datasheet
513Kb / 15P		 Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package
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STGWA40H60DLFB STMICROELECTRONICS-STGWA40H60DLFB Datasheet
871Kb / 15P		 Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package
03-Mar-2017
STGWA40HP65FB2 STMICROELECTRONICS-STGWA40HP65FB2 Datasheet
516Kb / 16P		 Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
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STGWA50HP65FB2 STMICROELECTRONICS-STGWA50HP65FB2 Datasheet
542Kb / 15P		 Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package
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STGWA75H65DFB2 STMICROELECTRONICS-STGWA75H65DFB2 Datasheet
560Kb / 15P		 Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package
13-Feb-2020
STGWA80H65DFBAG STMICROELECTRONICS-STGWA80H65DFBAG Datasheet
280Kb / 14P		 Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
06-Dec-2022
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Sobre a STMicroelectronics

A STMicroelectronics é um fabricante multinacional de eletrônicos e semicondutores com sede em Genebra, Suíça.

A empresa oferece uma ampla gama de produtos, incluindo microcontroladores, sensores, amplificadores de energia e circuitos integrados para várias aplicações nos mercados automotivo, industrial e de consumo.

Fundada em 1987, a STMicroelectronics possui operações em mais de 100 países e é uma das maiores empresas de semicondutores do mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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