DESCRIPTION
The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x128Kx72. The Module contains eight (8) Synchronous Burst Ram Devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The module architecture is defined as a Sync/Sync Burst, Flow-Through, with support for either linear or sequential burst. This module provides High Performance, 2-1-1-1 accesses when used in Burst Mode, and used as a Synchronous Only Mode, provides a high performance cost advantage over BiCMOS aysnchronous device architectures.

FEATURES
■ 4x128Kx72 Synchronous, Synchronous Burst
■ Flow-Through Architecture
■ Linear and Sequential Burst Support via MODE pin
■ Clock Controlled Registered Module Enable (EM#)
■ Clock Controlled Registered Bank Enables (E1#, E2#, ■3#, E4#)
■ Clock Controlled Byte Write Mode Enable (BWE#)
■ Clock Controlled Byte Write Enables (BW1# - BW8#)
■ Clock Controlled Registered Address
■ Clock Controlled Registered Global Write (GW#)
■ Aysnchronous Output Enable (G#)
■ Internally Self-timed Write
■ Individual Bank Sleep Mode enables (ZZ1, ZZ2, ZZ3, ZZ4)
■ Gold Lead Finish
■ 3.3V +10% Operation
■ Access Speed(s): TKHQV=8.5, 10, 12, 15ns
■ Common Data I/O
■ High Capacitance (30pf) drive, at rated Access Speed
■ Single Total Array Clock
■ Multiple Vcc and Gnd