FEATURES
• 3.3V power supply
• LVTTL compatible with multiplexed address
• Dual bank operation
• MRS cycle with address key programs
-. CAS Latency (2, 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
• Burst Read Single-bit Write operation
• DQM 0-3 for byte masking
• Auto & self refresh
• 32ms refresh period (2K cycle)
• 100 Pin PQFP, TQFP (14 x 20 mm)

Graphics Features
• SMRS cycle.
-. Load mask register
-. Load color register
• Write Per Bit(Old Mask)
• Block Write(8 Columns)

GENERAL DESCRIPTION
The K4G323222M is 33,554,432 bits synchronous high data
rate Dynamic RAM organized as 2 x 524,288 words by 32 bits,
fabricated with SAMSUNG¢s high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length, and programmable latencies allows the same
device to be useful for a variety of high bandwidth, high performance
memory system applications.
Write per bit and 8 columns block write improves performance in
graphics systems.