DESCRIPTION
TS8510VB is a high power infrared, 855 nm surface emitting
diode in GaAlAs technology with high radiant power and
high speed. Polarity configuration is “n-up”.

GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.

FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
0.260 x 0.260 x 0.17
• Peak wavelength:  = 855 nm
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912