Description
The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/
BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat-
ing margins, both internaily and to the system user. Multiplexed address inputs permit the TC5118165BJ/BFT to be pack-
aged in a standard 42 pin plastic SOJ and 50/44 pin plastic TSOP. The package size provides high system bit densities and
is compatible with widely available automated testing and insertion equipment. System oriented features include single
power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

Features
1,048,576 word by 16 bit organization
• Fast access time and cycle time
Single power supply of 5V±10% with a built-in VBB generator
• Low Power
990mW MAX. Operating
(TC5118165BJ/BFT-60)
825mW MAX. Operating
(TC5118165BJ/BFT-70)
5.5mW MAX. Standby
• Outputs unlatched at cycle end allows two-dimensional chip
selection
• Read-Modify-Write, CAS before RAS refresh,
RAS-only refresh, Hidden refresh, Hyper Page
Mode (EDO) and Test Mode capability
All inputs and outputs TTL compatible
1024 refresh cycles/16ms
Package
TC5118165BJ:
SOJ42-P-400
TC5118165BFT: TSOP50-P-400
Note: For packaging details see Mechanical Dimensions section.