Description
The RFD3055, RFD3055SM and RFP3055 N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Features
• 12A, 60V
• rDS(ON) = 0.150Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175°C Operating Temperature