STGO30H60DLLFBAG Folha de dados(PDF) - STMicroelectronics

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STGO30H60DLLFBAG Folha de dados (PDF) - STMicroelectronics

STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics


Nome de Peças	STGO30H60DLLFBAG

Download	STGO30H60DLLFBAG Download

Tamanho do Arquivo	1487.47 Kbytes

página	15 Pages

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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Descrição Electrónicos

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG Datasheet (PDF)

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STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics


Nome de Peças	STGO30H60DLLFBAG

Download	STGO30H60DLLFBAG Click to download

Tamanho do Arquivo	1487.47 Kbytes

página	15 Pages

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

Logo

Descrição Electrónicos	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG Folha de dados (HTML) - STMicroelectronics

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STGO30H60DLLFBAG Detalhes do produto

Features
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• Logic level gate drive
• High-speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 30 A
• Low VF soft-recovery co-packaged diode
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.

Applications
• Automotive injection

Nº de peça semelhante - STGO30H60DLLFBAG

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Descrição semelhante - STGO30H60DLLFBAG

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT 20-Mar-2013
	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 28-Jul-2015
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed 04-Nov-2016
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed 18-Mar-2014
	STGW60H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed 24-Feb-2014
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 18-Oct-2016
	STGH30H65DFB-2AG	408Kb / 17P	Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package 13-Apr-2022
	STGWA40H60DLFB	871Kb / 15P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package 03-Mar-2017

Sobre a STMicroelectronics

A STMicroelectronics é um fabricante multinacional de eletrônicos e semicondutores com sede em Genebra, Suíça.

A empresa oferece uma ampla gama de produtos, incluindo microcontroladores, sensores, amplificadores de energia e circuitos integrados para várias aplicações nos mercados automotivo, industrial e de consumo.

Fundada em 1987, a STMicroelectronics possui operações em mais de 100 países e é uma das maiores empresas de semicondutores do mundo.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.

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