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IRFD210 Folha de dados (PDF) - Harris Corporation

IRFD210 Datasheet PDF - Harris Corporation
Nome de Peças IRFD210
Download  IRFD210 Download
Tamanho do Arquivo   360.56 Kbytes
página   6 Pages
Fabricante Electrônico  HARRIS [Harris Corporation]
Página de início  http://www.harris.com
Logo HARRIS - Harris Corporation
Descrição Electrónicos 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

IRFD210 Datasheet (PDF)

Go To PDF Page Download Folha de dados
IRFD210 Datasheet PDF - Harris Corporation

Nome de Peças IRFD210
Download  IRFD210 Click to download

Tamanho do Arquivo   360.56 Kbytes
página   6 Pages
Fabricante Electrônico  HARRIS [Harris Corporation]
Página de início  http://www.harris.com
Logo HARRIS - Harris Corporation
Descrição Electrónicos 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

IRFD210 Folha de dados (HTML) - Harris Corporation


IRFD210 Detalhes do produto

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Features
• 0.6A and 0.45A, 150V and 200V
• rDS(ON) = 1.5Ω and 2.4Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards"




Nº de peça semelhante - IRFD210

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
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Intersil Corporation
IRFD210 INTERSIL-IRFD210 Datasheet
52Kb / 6P
0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET
July 1999
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International Rectifier
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Descrição semelhante - IRFD210

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Intersil Corporation
IRF220 INTERSIL-IRF220 Datasheet
68Kb / 7P
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
October 1997
IRF230 INTERSIL-IRF230 Datasheet
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8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
October 1997
IRF9230 INTERSIL-IRF9230 Datasheet
72Kb / 7P
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
January 1998
IRFD1Z0 INTERSIL-IRFD1Z0 Datasheet
57Kb / 6P
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
July 1998
RFK25N18 INTERSIL-RFK25N18 Datasheet
42Kb / 5P
25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs
October 1998
RFL1N12 INTERSIL-RFL1N12 Datasheet
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1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs
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RFL1N18 INTERSIL-RFL1N18 Datasheet
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1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
January 1998
RFL4N12 INTERSIL-RFL4N12 Datasheet
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4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
September 1998
RFM12N18 INTERSIL-RFM12N18 Datasheet
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12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
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RFP2N12 INTERSIL-RFP2N12 Datasheet
35Kb / 5P
2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
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Sobre a Harris Corporation


Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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