○ Switching Regulator Applications
○ Load Switch Applications

• Lead(Pb)-Free
• Multi-chip discrete device; built-in P channel MOS FET for main
   switch and N Channel MOS FET for drive
• Small footprint due to small and thin package
• Low drain-source ON resistance
   : P Channel RDS (ON) = 31 mΩ (typ.)
• Low drain-source ON resistance
   High forward transfer admittance
   : P Channel |Yfs| = 13 S (typ.)
• Low leakage current
   : P Channel IDSS = −10 μA (VDS = −12 V)
• Enhancement−mode
   : P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA)