GENERAL DESCRIPTION
The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabri cated with SAMSUNG¢s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

FEATURES
• 3.0V & 3.3 power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
    -. CAS latency (1, 2 & 3).
    -. Burst length (1, 2, 4, 8 & Full page).
    -. Burst type (Sequential & Interleave).
• All inputs are sampled at the positive going edge of the system clock .
• Burst read single-bit write operation.
• DQM for masking.
• Auto & self refresh.
• 64ms refresh period (4K cycle).
• Extended temperature operation (-25°C to 85°C). Industrial temperature operation ( -40°C to 85°C).
• 90balls FBGA(-SXXX -Pb, -DXXX -Pb Free).