GENERAL DESCRIPTION
The HMC8142 is an integrated E-band gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz. The HMC8142 provides 21 dB of gain, 25 dBm of output power at 1 dB compression, 29 dBm of output third-order intercept, and 26 dBm of saturated output power at 20% power added efficiency (PAE) from a 4 V power supply. The HMC8142 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long ribbon on each port.

FEATURES
   Gain: 21 dB typical
   Output power for 1 dB compression (P1dB): 25 dBm typical
   Saturated output power (PSAT): 26 dBm typical
   Output third-order intercept (OIP3): 29 dBm typical
   Input return loss: 12 dB typical
   Output return loss: 8 dB typical
   DC supply: 4 V at 450 mA
   No external matching required
   Die size: 3.039 mm × 1.999 mm × 0.05 mm

APPLICATIONS
   E-band communication systems
   High capacity wireless backhaul radio systems
   Test and measurement