1. Device Type & Package:

️· Transistor: The document details the specifications for a transistor.
️· Package: TO-92

2. Absolute Maximum Ratings (Important for safe operation):

️· Collector-Base Voltage (VCBO): 40V
️· Collector-Emitter Voltage (VCEO): 25V
️· Emitter-Base Voltage (VEBO): 6V
️· Continuous Collector Current (IC): 0.8A
️· Collector Dissipation (PC): 625mW
️· Junction & Storage Temperature (TJ, TSTG): 125°C, -55°C to +150°C

3. Electrical Characteristics (Typical values at specified conditions):

️· Collector Cut-Off Current (ICBO): ≤ 0.1µA
️· Emitter Cut-Off Current (ICEO): ≤ 0.1µA
️· DC Current Gain (hFE):
- hFE1 (VCE=1V, IC=5mA): ≥ 45
- hFE2 (VCE=1V, IC=100mA): 80 - 400
- hFE3 (VCE=1V, IC=800mA): ≥ 40
️· Collector-Emitter Saturation Voltage (VCE(sat)): 0.5V (IC=800mA, IB=80mA)
️· Base-Emitter Saturation Voltage (VBE(sat)): 1.2V (IC=800mA, IB=80mA)
️· Transition Frequency (fT): 150MHz (VCE=6V, IC=20mA)

4. Pinout:

️· 1: Emitter
️· 2: Base
️· 3: Collector

5. Revision History:

️· Rev. A, 29-Jan-2013 (Page 1 of 1)

Key Takeaways:

️· This document serves as a datasheet for a bipolar junction transistor (BJT).
️· It provides essential electrical characteristics and maximum ratings to ensure proper and safe operation of the device.
️· The pinout diagram allows for correct connection of the transistor in a circuit.