# isc N-Channel MOSFET Transistor IRFZ24N

## Features

· Drain Current: ID = 17A @ TC = 25℃
· Drain-Source Voltage: V DSS = 55V (Min)
· Static Drain-Source On-Resistance: R DS(on) = 0.07Ω (Max)
· Fast Switching
· Minimum Lot-to-Lot Variations

## Absolute Maximum Ratings

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	55	V
VGS	Gate-Source Voltage-Continuous	±20	V
ID	Drain Current-Continuous@TC=25℃	17	A
ID	Drain Current-Continuous@TC=100℃	12	A
IDM	Drain Current-Single Pulse	68	A
PD	Total Dissipation @TC=25℃	45	W
TJ	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

## Thermal Characteristics

SYMBOL	PARAMETER	MAX	UNIT
Rth j-c	Thermal Resistance, Junction to Case	3.3	℃/W
Rth j-a	Thermal Resistance, Junction to Ambient	62	℃/W

## Electrical Characteristics (TC=25℃ unless otherwise specified)

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V(BR)DSS	Drain-Source Breakdown Voltage	VGS=0; ID=0.25mA	55		V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=0.25mA	2	4	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=10A		0.07	Ω
IGSS	Gate-Body Leakage Current	VGS=±20V;VDS=0		±100	nA
IDSS	Zero Gate Voltage Drain Current	VDS=55V; VGS=0<br>VDS=44V; VGS=0; Tj=150℃		25<br>250	μA
VSD	Forward On-Voltage	IS=10A; VGS=0		1.3	V

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