# BC 807 / BC 808 General Purpose Transistors

## Features

️· PNP Surface Mount Si-Epitaxial Planar Transistors
️· UL classification 94V-0 plastic material
️· Standard packaging: taped and reeled

## Maximum Ratings

️· Voltage:
- Collector-Emitter (B open): 45V (BC 807), 25V (BC 808)
- Collector-Emitter (B shorted): 50V (BC 807), 30V (BC 808)
- Collector-Base (E open): 50V (BC 807), 30V (BC 808)
- Emitter-Base (C open): 5V
️· Power: 310 mW
️· Current:
- Collector (DC): 800 mA
- Peak Collector: 1000 mA
- Peak Base: 200 mA
- Peak Emitter: 1000 mA
️· Temperature:
- Junction: 150 °C
- Storage: -65 to +150 °C

## Characteristics (Tj = 25 °C)

️· DC Current Gain (hFE):
- VCE = 1 V, IC = 100 mA:
■ BC 807: 100-600
■ BC 808: 40 –
- VCE = 1 V, IC = 500 mA:
■ BC 807: -
■ BC 808: -
- Group -16 (BC 807): hFE = 100
- Group -25 (BC 807): hFE = 160
- Group -40 (BC 807): hFE = 250
- Group -16 (BC 808): hFE = 160
- Group -25 (BC 808): hFE = 250
- Group -40 (BC 808): hFE = 400

️· Collector Saturation Voltage (Vcesat): 0.7 V (Ic = 500 mA, Ib = 50 mA)
️· Base Saturation Voltage (VbeSat): 1.3 V (Ic = 500 mA, Ib = 50 mA)
️· Base-Emitter Voltage (Vbe): 1.2 V (Vce = 1 V, Ic = 500 mA)
️· Collector-Base Cutoff Current (Icb0): ≤ 100 nA (IE = 0, Vcb = 20 V); ≤ 5 /g58A at Tj = 150 °C
️· Emitter-Base Cutoff Current (Ieb0): ≤ 100 nA (Ic = 0, Veb = 4 V)
️· Gain-Bandwidth Product (fT): 80-100 MHz (Vce = 5 V, Ic = 10 mA, f = 50 MHz)
️· Collector-Base Capacitance (Ccb0): ≤ 12 pF (Vcb = 10 V, IE = ie = 0, f = 1 MHz)
️· Thermal Resistance: 320 K/W

## Mounting

️· Designed to be mounted on a P.C. board with 3 mm copper pads.

## Marking

️· BC 807: 5D
️· BC 808: 5H
️· Other markings represent available current gain groups (e.g., 5A, 5B, 5C, 5E, 5F, 5G).

## Recommended Complementary NPN Transistor

️· BC 817