1. General Description:

️· Type: N-Channel MOSFET
️· Logic-Level Device: This device is designed to operate with lower gate-source voltage (VGS) requirements, making it suitable for direct drive from logic circuits.

2. Key Electrical Characteristics:

️· VDS (Drain-Source Voltage): 60 V
️· VGS (Gate-Source Voltage): -30 V to +20 V (Note the negative limit)
️· ID (Drain Current): Up to 120 A (Continuous)
️· RDS(on) (Drain-Source On-Resistance): Around 0.50 ohms at VGS = 10V and ID = 120A. This value varies significantly with VGS. Lower VGS = higher RDS(on).
️· Input Capacitance: Approximately 46 pF
️· Gate Charge: Around 22 nC.

3. Features:

️· Logic Level Operation (VGS(th) = 1.5V max)
️· Fast Switching Times
️· High Current Capability
️· Avalanche Rated
️· Logic-Level Gate Drive
️· Fully Characterized for Avalanche Operation

4. Thermal Characteristics:

️· Junction to Case Thermal Resistance (RθJC): Around 0.5 °C/W.
️· Case to Ambient Thermal Resistance (RθCA): Varies greatly depending on heat sink and PCB layout.
️· Maximum Junction Temperature (Tj): 175 °C
️· Storage Temperature: -55°C to +150°C

5. Switching Time Characteristics (TO-252AA package – typical values):

️· t_d(on) (Turn-on Delay): Around 20ns
️· t_r (Rise Time): Roughly 20ns
️· t_d(off) (Turn-off Delay): Approximately 40ns
️· t_f (Fall Time): Roughly 25ns

6. Safe Operating Area (SOA):

️· Provides a graphical representation of how much energy the MOSFET can handle in avalanche mode before damage. Shows a relationship between Drain Current (ID) and Drain-Source Voltage (VDS), with a maximum energy limit.

7. Diode Characteristics (Body Diode):

️· Vf (Forward Voltage): Around 0.7V at IF=1A
️· Reverse Recovery Time (trr): Relatively fast

8. Gate Charge Test Circuit:
️· Standard test circuit to measure the gate charge of the MOSFET.

9. Package Information:

️· Package Type: TO-252AA (D-PARK)
️· Dimensions are detailed with millimeter (inches) values.
️· Part Marking Information: Includes a description of the code on the package.

10. Testing Circuits and Figures:

The datasheet includes several test circuit diagrams and figures illustrating:

️· Unclamped Inductive Test Circuit (for avalanche energy testing)
️· Gate Charge Test Circuit
️· Peak Diode Recovery dv/dt Test Circuit
️· Logic-level drive circuit



IMPORTANT NOTES:

️· Image-Based Extraction: The information above is extracted from scanned images. There's a potential for slight inaccuracies due to image quality, resolution, and reading variability. Always refer to the official International Rectifier (now Infineon) datasheet for the *definitive* specifications.
️· Parameter Variation: Many parameters (e.g., RDS(on), thermal resistance) are highly dependent on operating conditions (temperature, gate voltage, drive method). The values given are *typical* values and may vary.
️· Datasheet Version: It is unknown which specific version of the datasheet the images are from. Later versions might have updated specifications or test methods.
️· Complex Graphs: Interpreting complex graphs (like the SOA graph) is challenging based solely on image data. A digital datasheet would allow for more precise readings.
️· Circuit Diagrams: The schematic diagrams are also extracted images. Missing or slightly incorrect connections could alter their function. Double-check against the original source before using.



To obtain the official and complete datasheet for the IRFR120N, search on the Infineon website: [https://www.infineon.com/](https://www.infineon.com/).