Okay, I'm going to summarize the information provided, breaking it down into sections for clarity. This is a datasheet for the Hitachi 2SC5544 NPN silicon power transistor.

1. Basic Information & Function

️· Type: NPN Silicon Power Transistor
️· Intended Use: Primarily designed for high-frequency switching applications. Suitable for amplifiers, oscillators, and power switching circuits.

2. Electrical Characteristics (Key Values - see full datasheet for complete specifications)

️· V_CEO (Collector-Emitter Voltage): 120 V
️· V_CE(sat) (Collector-Emitter Saturation Voltage): 2.1 V (max) @ 10 A
️· I_C (Collector Current): 20 A (max)
️· P_D (Collector Dissipation): 75 W
️· f_T (Transition Frequency): 30 GHz (minimum)
️· h_FE (DC Current Gain): Ranges significantly (between 13 and 53) @ Ic= 1A, Vce= 5V.
️· Operating Temperature: -55 °C to +150 °C

3. Package Information

️· Package Type: MFPAK (Metal Flange Package)

️· Dimensions: (See the document for the exact diagram) Roughly 0.2" x 0.2" with a metal flange.
️· EIAJ/JEDEC Standard: Not specified

4. Important Notes & Cautions (Crucial for Safe Usage)

️· Intellectual Property: Hitachi disclaims any rights to patents or other IP regarding this transistor.
️· Product Changes: Specifications are subject to change without notice. Always verify with latest documentation.
️· High Reliability Applications: Use with caution in life-critical or safety-critical applications (aerospace, medical equipment, etc.). Requires careful design and safety measures.
️· Design Considerations: Ensure operation within specified limits to avoid damage.
️· Radiation Resistance: Not radiation resistant.
️· Reproduction: Reproduction of the datasheet is prohibited without Hitachi's permission.

5. Contact Information

️· Detailed contact information for Hitachi sales offices in North America, Europe, Asia (Singapore, Taiwan, Hong Kong), and the UK are provided.



To get the full details, you *must* refer to the complete datasheet, as this is a summary. Key specifications are omitted.