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Hello, Please ask a question about 2SC4955 Datasheet
# Example questions:
➢ According to the text, what applications are recommended for 'special' quality grade devices?
➢ How does increasing the collector current (ic) from 10ma to 1ma affect the s11 parameter (magnitude and phase)?
➢ At 4 ghz, compare and contrast the s22 parameter for ic = 1ma and ic = 10ma. what trends can be observed?
1. General Information:
️· Document Type: Data Sheet for a semiconductor device.
️· Manufacturer: NEC Corporation
️· Device: 2SC4955 Transistor
️· Copyright/Disclaimer: NEC Corporation owns the copyright and doesn't assume liability for errors, patent infringement, or damage arising from the use of the device. Customers are responsible for incorporating safety measures in their designs.
2. Quality Grades (Important for Application):
️· Standard: General electronics (computers, office equipment, audio/visual, etc.). This is the default.
️· Special: Critical applications like transportation, anti-disaster systems, and medical equipment (excluding life support).
️· Specific: Very high reliability systems (aircraft, nuclear control systems, life support medical). Requires a customer-specific quality assurance program.
️· Warning: Anti-radioactive design is *not* implemented in this device.
3. S-Parameters (Key Electrical Characteristics – The Heart of the Data Sheet):
This section contains tables of S-parameters for the transistor. S-parameters describe how signals are reflected and transmitted through the device at different frequencies. They are critical for RF (Radio Frequency) circuit design. I'm unable to visualize these tables in this text format.
️· Parameters listed:
- S11 (Reflection Coefficient)
- S21 (Forward Transmission Coefficient)
- S12 (Reverse Transmission Coefficient)
- S22 (Reflection Coefficient)
️· Measurements Taken at Multiple Biasing Conditions: Data is provided for different collector-emitter voltages (Vce) and base-emitter voltages (Vbe) to show how the transistor's behavior changes with bias.
️· Frequency Range: The data spans a range of frequencies, typically from a few hundred MHz to several GHz.
4. Measurement Conditions:
️· The data sheet specifies the conditions under which the S-parameter measurements were taken. This includes:
- Frequency: Range of frequencies tested
- Bias Voltage: Collector-Emitter Voltage (Vce) and Base-Emitter Voltage (Vbe)
- Temperature: Often room temperature (25°C), but other temperatures may be specified.
5. Other Notes (Important Legal and Safety Information):
️· No Reproduction without Permission: Copyrighted material.
️· Liability Disclaimer: NEC disclaims liability for errors, patent infringement, or damage.
️· Safety Measures: Customers *must* incorporate safety measures in their designs.
️· Anti-Radioactive Design: The device is not designed for use in radioactive environments.
Summary:
This NEC 2SC4955 data sheet provides detailed S-parameter information for RF design purposes. The device's electrical characteristics (how it handles signals) are described at multiple frequencies and bias conditions. It is intended for a range of applications with increasing reliability, from standard consumer electronics to critical safety systems. Customers should be aware of the legal disclaimers, safety considerations, and limitations of the device (specifically, the lack of anti-radioactive design) before integrating it into their products. The data is crucial for RF circuit designers who need to understand how the transistor will behave in a specific application.
1. General Information:
️· Document Type: Data Sheet for a semiconductor device.
️· Manufacturer: NEC Corporation
️· Device: 2SC4955 Transistor
️· Copyright/Disclaimer: NEC Corporation owns the copyright and doesn't assume liability for errors, patent infringement, or damage arising from the use of the device. Customers are responsible for incorporating safety measures in their designs.
2. Quality Grades (Important for Application):
️· Standard: General electronics (computers, office equipment, audio/visual, etc.). This is the default.
️· Special: Critical applications like transportation, anti-disaster systems, and medical equipment (excluding life support).
️· Specific: Very high reliability systems (aircraft, nuclear control systems, life support medical). Requires a customer-specific quality assurance program.
️· Warning: Anti-radioactive design is *not* implemented in this device.
3. S-Parameters (Key Electrical Characteristics – The Heart of the Data Sheet):
This section contains tables of S-parameters for the transistor. S-parameters describe how signals are reflected and transmitted through the device at different frequencies. They are critical for RF (Radio Frequency) circuit design. I'm unable to visualize these tables in this text format.
️· Parameters listed:
- S11 (Reflection Coefficient)
- S21 (Forward Transmission Coefficient)
- S12 (Reverse Transmission Coefficient)
- S22 (Reflection Coefficient)
️· Measurements Taken at Multiple Biasing Conditions: Data is provided for different collector-emitter voltages (Vce) and base-emitter voltages (Vbe) to show how the transistor's behavior changes with bias.
️· Frequency Range: The data spans a range of frequencies, typically from a few hundred MHz to several GHz.
4. Measurement Conditions:
️· The data sheet specifies the conditions under which the S-parameter measurements were taken. This includes:
- Frequency: Range of frequencies tested
- Bias Voltage: Collector-Emitter Voltage (Vce) and Base-Emitter Voltage (Vbe)
- Temperature: Often room temperature (25°C), but other temperatures may be specified.
5. Other Notes (Important Legal and Safety Information):
️· No Reproduction without Permission: Copyrighted material.
️· Liability Disclaimer: NEC disclaims liability for errors, patent infringement, or damage.
️· Safety Measures: Customers *must* incorporate safety measures in their designs.
️· Anti-Radioactive Design: The device is not designed for use in radioactive environments.
Summary:
This NEC 2SC4955 data sheet provides detailed S-parameter information for RF design purposes. The device's electrical characteristics (how it handles signals) are described at multiple frequencies and bias conditions. It is intended for a range of applications with increasing reliability, from standard consumer electronics to critical safety systems. Customers should be aware of the legal disclaimers, safety considerations, and limitations of the device (specifically, the lack of anti-radioactive design) before integrating it into their products. The data is crucial for RF circuit designers who need to understand how the transistor will behave in a specific application.
| Part No. | 2SC4955 |
| Manufacturer | NEC |
| Size | 44 Kbytes |
| Pages | 6 pages |
| Description | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
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