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BC847C Datasheet with Chat AI
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    Hello, Please ask a question about BC847C Datasheet

  • # Example questions: ➢ What is the typical collector-emitter saturation voltage (vce(sat)) for a bc847 transistor when the collector current (ic) is 100ma and the base current (ib) is 5.0ma?
    ➢ What is the maximum operating junction temperature (tj) and storage temperature range (tstg) for the bc846, bc847, and bc848 transistors?
    ➢ What packaging type is specified for the bc84xx-7 series, and how many units are shipped per reel?

  • Part No.BC847C
    ManufacturerDIODES
    Size60 Kbytes
    Pages3 pages
    DescriptionNPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
    Datasheet Summary with AI

    1. General Information & Ordering

    ️· Series: BC846A - BC848C (NPN bipolar junction transistors)
    ️· Package: SOT-23
    ️· Ordering: BC84xx-7* (where 'xx' designates the specific variant)
    ️· Datasheet Location: http://www.diodes.com/datasheets/ap02007.pdf for packaging details and http://www.diodes.com/datasheets/ap02001.pdf for pad layout.
    ️· Marking: Uses a combination of product type and date code. (See tables for mapping years and months to codes)

    2. Electrical Characteristics (at 25°C unless otherwise stated)

    ️· Breakdown Voltages:
    - *V(BR)CBO* (Collector-Base Breakdown): 80V (BC846), 50V (BC847), 30V (BC848)
    - *V(BR)CEO* (Collector-Emitter Breakdown): 65V (BC846), 45V (BC847), 30V (BC848)
    - *V(BR)EBO* (Emitter-Base Breakdown): 6V (BC846), 5V (BC847)
    ️· H-Parameters (Current Gain Subgroups):
    - *hfe* (Current Gain): Values vary significantly between subgroups A, B, and C. Example for BC846: 220, 330, 600
    - *hie* (Input Impedance): Values range from 2.7 to 8.7
    - *hoe* (Output Admittance): Values range from 1.5x10^-4 to 3x10^-4
    - *hre* (Reverse Voltage Transfer Ratio): Not provided, but listed as a parameter.
    ️· DC Current Gain (hFE):
    - BC846: 110, 180
    - BC847: 200, 290
    - BC848: 420, 520, 800
    ️· Saturation Voltages:
    - *VCE(SAT)*: Ranges from 90mV to 600mV, depending on the specific variant and collector current.
    - *VBE(ON)*: BC846: 580mV; BC847: 660mV; BC848: 700mV, 770mV
    ️· Cutoff Current:
    - *ICES*: Ranges from 5.0nA to 15nA (BC846-BC848)
    ️· Gain Bandwidth Product (fT): 100-300 MHz
    ️· Collector-Base Capacitance (CCBO): Around 3.0 pF
    ️· Noise Figure (NF): Varies from 2 to 10 dB.

    3. Physical & Environmental Characteristics

    ️· Operating & Storage Temperature Range: -65°C to +150°C
    ️· Power Dissipation (Pd): 300 mW
    ️· Thermal Resistance (RθJA): 417 °C/W (mounted on FR-4 PCB)

    Important Notes

    ️· Subgroup Variations: The current gain (hFE) varies significantly based on the subgroup (A, B, C). Group C isn't available for BC846.
    ️· Testing Conditions: Datasheet values are generally at 25°C. Performance may change with temperature.
    ️· Datasheet Reference: For complete specifications and packaging details, refer to the linked datasheets.



    This summary captures the key information from the provided text. Do you have any specific questions about any of these points or want me to elaborate on anything?

    1. General Information & Ordering

    ️· Series: BC846A - BC848C (NPN bipolar junction transistors)
    ️· Package: SOT-23
    ️· Ordering: BC84xx-7* (where 'xx' designates the specific variant)
    ️· Datasheet Location: http://www.diodes.com/datasheets/ap02007.pdf for packaging details and http://www.diodes.com/datasheets/ap02001.pdf for pad layout.
    ️· Marking: Uses a combination of product type and date code. (See tables for mapping years and months to codes)

    2. Electrical Characteristics (at 25°C unless otherwise stated)

    ️· Breakdown Voltages:
    - *V(BR)CBO* (Collector-Base Breakdown): 80V (BC846), 50V (BC847), 30V (BC848)
    - *V(BR)CEO* (Collector-Emitter Breakdown): 65V (BC846), 45V (BC847), 30V (BC848)
    - *V(BR)EBO* (Emitter-Base Breakdown): 6V (BC846), 5V (BC847)
    ️· H-Parameters (Current Gain Subgroups):
    - *hfe* (Current Gain): Values vary significantly between subgroups A, B, and C. Example for BC846: 220, 330, 600
    - *hie* (Input Impedance): Values range from 2.7 to 8.7
    - *hoe* (Output Admittance): Values range from 1.5x10^-4 to 3x10^-4
    - *hre* (Reverse Voltage Transfer Ratio): Not provided, but listed as a parameter.
    ️· DC Current Gain (hFE):
    - BC846: 110, 180
    - BC847: 200, 290
    - BC848: 420, 520, 800
    ️· Saturation Voltages:
    - *VCE(SAT)*: Ranges from 90mV to 600mV, depending on the specific variant and collector current.
    - *VBE(ON)*: BC846: 580mV; BC847: 660mV; BC848: 700mV, 770mV
    ️· Cutoff Current:
    - *ICES*: Ranges from 5.0nA to 15nA (BC846-BC848)
    ️· Gain Bandwidth Product (fT): 100-300 MHz
    ️· Collector-Base Capacitance (CCBO): Around 3.0 pF
    ️· Noise Figure (NF): Varies from 2 to 10 dB.

    3. Physical & Environmental Characteristics

    ️· Operating & Storage Temperature Range: -65°C to +150°C
    ️· Power Dissipation (Pd): 300 mW
    ️· Thermal Resistance (RθJA): 417 °C/W (mounted on FR-4 PCB)

    Important Notes

    ️· Subgroup Variations: The current gain (hFE) varies significantly based on the subgroup (A, B, C). Group C isn't available for BC846.
    ️· Testing Conditions: Datasheet values are generally at 25°C. Performance may change with temperature.
    ️· Datasheet Reference: For complete specifications and packaging details, refer to the linked datasheets.



    This summary captures the key information from the provided text. Do you have any specific questions about any of these points or want me to elaborate on anything?

    Part No.BC847C
    ManufacturerDIODES
    Size60 Kbytes
    Pages3 pages
    DescriptionNPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
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