# BSS139Z N-Channel Power MOSFET

## Description
️· N-Channel Power MOSFET
️· Designed for battery-powered products, power management, and DC-DC converters
️· High switching speed
️· Low threshold voltage

## Features
️· RDS(ON) = 5.6Ω @ VGS=5V, ID=200mA
️· High switching speed
️· Low threshold voltage (0.5V - 1.5V)

## Pin Configuration
️· 1: Source
️· 2: Gate
️· 3: Drain

## Absolute Maximum Ratings
️· Drain-Source Voltage (VDSS): 50V
️· Gate-Source Voltage (VGSS): ±20V
️· Continuous Drain Current (ID): 200mA
️· Pulsed Drain Current (IDM): 800mA (tp ≤ 10µs)
️· Power Dissipation (PD): 225mW
️· Junction Temperature (TJ): -55°C to +150°C
️· Storage Temperature Range (TSTG): -55°C to +150°C

## Thermal Characteristics
️· Junction-to-Ambient Thermal Resistance (θJA): 556 °C/W

## Electrical Characteristics (TA = 25°C)
OFF Characteristics
️· Drain-Source Breakdown Voltage (BVDSS): 50V (ID=250µA, VGS=0V)
️· Drain-Source Leakage Current (IDSS): 0.1µA (VDS=25V, VGS=0V), 0.5µA (VDS=50V, VGS=0V)
️· Gate-Source Leakage Current (IGSS): ±10µA (VGS = ±20V, VDS=0V)

ON Characteristics
️· Gate Threshold Voltage (VGS(TH)): 0.5V - 1.5V (VDS=VGS, ID=1.0mA)
️· Static Drain-Source On-State Resistance (RDS(ON)): 5.6Ω (VGS=2.75V, ID=200mA), 3.5Ω (VGS=5.0V, ID=200mA)

Dynamic Parameters
️· Input Capacitance (CISS): 40-50 pF (VGS=0V, VDS=25V, f=1.0MHz)
️· Output Capacitance (COSS): 12-25 pF
️· Reverse Transfer Capacitance (CRSS): 3.5-5.0 pF

Switching Parameters
️· Turn-ON Delay Time (tD(ON)): 20ns (VDD=30V, ID=0.2A)
️· Turn-OFF Delay Time (tD(OFF)): 20ns

## Ordering Information
️· BSS139ZL-AE2-R: SOT-23-3 package, Tape Reel, Lead Free
️· BSS139ZG-AE2-R: SOT-23-3 package, Tape Reel, Halogen Free