## Summary of the STMicroelectronics MJD31CT4 NPN Transistor Datasheet

This document is a datasheet for the STMicroelectronics MJD31CT4, a medium-power NPN bipolar junction transistor. Here’s a breakdown of the key specifications and features:

Key Characteristics:

️· Type: NPN
️· Voltage:
- Collector-Base Voltage (Vcb): 100V
- Collector-Emitter Voltage (Vce): 100V
- Emitter-Base Voltage (Veb): 5V
️· Current:
- Continuous Collector Current (Ic): 3A
- Peak Collector Current (Icm): 5A
- Base Current (Ib): 1A
️· Power Dissipation (PTOT): 15W (at Tc = 25°C)
️· Operating Temperature (TJ): Max 150°C
️· Storage Temperature (Tstg): -65°C to +150°C
️· Package: TO-252 (DPAK) – Surface mount package
️· ECOPACK: Lead-free package for environmental compliance

Performance Highlights:

️· hFE (DC Current Gain): Typically 25-50 depending on IC (1A or 3A) and VCE.
️· Saturation Voltage (Vce(sat)): 1.2V (typical at 3A Ic and 375mA Ib)
️· Switching Characteristics: Data included in figures demonstrating resistive load switching times.

Key Applications:

️· Medium power switching and amplification applications.
️· Suitable for use in general-purpose applications where a robust NPN transistor is needed.

Important Notes:

️· Datasheet includes detailed electrical characteristics tables and graphs for performance analysis.
️· Includes package dimensions and ECOPACK information for environmentally conscious design.
️· Emphasizes that the product is subject to change without notice and that users are responsible for proper application and compliance with safety guidelines.



In essence, the MJD31CT4 is a versatile and relatively high-power NPN transistor suitable for a wide range of applications where moderate voltage and current handling are required. The TO-252 package makes it well-suited for surface-mount PCB designs.