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Hello, Please ask a question about 10N65G-TA3-T Datasheet
# Example questions:
➢ The datasheet includes diagrams for both to-220ab and to-220 fullpak packages. what key dimensional differences are highlighted between these two package types?
➢ The datasheet specifies dimensional tolerances (e.g., cpk - 33). what does this indicate about the manufacturing process and quality control of the component's packaging?
➢ What package type is the 10n65g-ta3 component?
# 10N65G-TA3-T N-Channel 650V Power MOSFET
## Features
· Low figure-of-merit (FOM) R on x Q g
· Low input capacitance (Ciss)
· Reduced switching and conduction losses
· Ultra low gate charge (Qg)
· Avalanche energy rated (UIS)
## Applications
· Server and telecom power supplies
· Switch mode power supplies (SMPS)
· Power factor correction power supplies (PFC)
· Lighting (HID, Fluorescent)
· Industrial
## Absolute Maximum Ratings
· Drain-Source Voltage (VDS): 650V
· Gate-Source Voltage (VGS): ±30V
· Continuous Drain Current (Tc=25°C): 10A
· Pulsed Drain Current (IDM): 40A
· Maximum Power Dissipation (PD): 34W
· Operating/Storage Temperature (TJ, Tstg): -55 to +150°C
## Key Specifications (TJ = 25 °C)
· VDS(breakdown): 650V
· RDS(on) (VGS=10V, ID=8A): 0.84 Ω
· Qg (Total Gate Charge): 43 nC
· Input Capacitance (Ciss): 1200 pF
## Package Options
· TO-220AB
· TO-220 FULLPAK
· TO-263AB (High Voltage)
## Notes
· Datasheet includes thermal resistance ratings.
· Detailed graphs for typical characteristics are provided (Output, Transfer, On-Resistance, Capacitance, Gate Charge, Switching Time, etc.)
· Dimensions and layout information for each package are available.
· RoHS and Halogen-free compliant.
· Disclaimer regarding application suitability is included.
# 10N65G-TA3-T N-Channel 650V Power MOSFET
## Features
· Low figure-of-merit (FOM) R on x Q g
· Low input capacitance (Ciss)
· Reduced switching and conduction losses
· Ultra low gate charge (Qg)
· Avalanche energy rated (UIS)
## Applications
· Server and telecom power supplies
· Switch mode power supplies (SMPS)
· Power factor correction power supplies (PFC)
· Lighting (HID, Fluorescent)
· Industrial
## Absolute Maximum Ratings
· Drain-Source Voltage (VDS): 650V
· Gate-Source Voltage (VGS): ±30V
· Continuous Drain Current (Tc=25°C): 10A
· Pulsed Drain Current (IDM): 40A
· Maximum Power Dissipation (PD): 34W
· Operating/Storage Temperature (TJ, Tstg): -55 to +150°C
## Key Specifications (TJ = 25 °C)
· VDS(breakdown): 650V
· RDS(on) (VGS=10V, ID=8A): 0.84 Ω
· Qg (Total Gate Charge): 43 nC
· Input Capacitance (Ciss): 1200 pF
## Package Options
· TO-220AB
· TO-220 FULLPAK
· TO-263AB (High Voltage)
## Notes
· Datasheet includes thermal resistance ratings.
· Detailed graphs for typical characteristics are provided (Output, Transfer, On-Resistance, Capacitance, Gate Charge, Switching Time, etc.)
· Dimensions and layout information for each package are available.
· RoHS and Halogen-free compliant.
· Disclaimer regarding application suitability is included.
| Part No. | 10N65G-TA3-T |
| Manufacturer | VBSEMI |
| Size | 2Mb |
| Pages | 10 pages |
| Description | N-Channel 6 50V (D-S) Power MOSFET |
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