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10N65G-TA3-T Datasheet with Chat AI
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  • # Example questions: ➢ The datasheet includes diagrams for both to-220ab and to-220 fullpak packages. what key dimensional differences are highlighted between these two package types?
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  • Part No.10N65G-TA3-T
    ManufacturerVBSEMI
    Size2Mb
    Pages10 pages
    DescriptionN-Channel 6 50V (D-S) Power MOSFET
    Datasheet Summary with AI

    # 10N65G-TA3-T N-Channel 650V Power MOSFET

    ## Features
    · Low figure-of-merit (FOM) R on x Q g
    · Low input capacitance (Ciss)
    · Reduced switching and conduction losses
    · Ultra low gate charge (Qg)
    · Avalanche energy rated (UIS)

    ## Applications
    · Server and telecom power supplies
    · Switch mode power supplies (SMPS)
    · Power factor correction power supplies (PFC)
    · Lighting (HID, Fluorescent)
    · Industrial

    ## Absolute Maximum Ratings
    · Drain-Source Voltage (VDS): 650V
    · Gate-Source Voltage (VGS): ±30V
    · Continuous Drain Current (Tc=25°C): 10A
    · Pulsed Drain Current (IDM): 40A
    · Maximum Power Dissipation (PD): 34W
    · Operating/Storage Temperature (TJ, Tstg): -55 to +150°C

    ## Key Specifications (TJ = 25 °C)
    · VDS(breakdown): 650V
    · RDS(on) (VGS=10V, ID=8A): 0.84 Ω
    · Qg (Total Gate Charge): 43 nC
    · Input Capacitance (Ciss): 1200 pF

    ## Package Options
    · TO-220AB
    · TO-220 FULLPAK
    · TO-263AB (High Voltage)

    ## Notes
    · Datasheet includes thermal resistance ratings.
    · Detailed graphs for typical characteristics are provided (Output, Transfer, On-Resistance, Capacitance, Gate Charge, Switching Time, etc.)
    · Dimensions and layout information for each package are available.
    · RoHS and Halogen-free compliant.
    · Disclaimer regarding application suitability is included.

    # 10N65G-TA3-T N-Channel 650V Power MOSFET

    ## Features
    · Low figure-of-merit (FOM) R on x Q g
    · Low input capacitance (Ciss)
    · Reduced switching and conduction losses
    · Ultra low gate charge (Qg)
    · Avalanche energy rated (UIS)

    ## Applications
    · Server and telecom power supplies
    · Switch mode power supplies (SMPS)
    · Power factor correction power supplies (PFC)
    · Lighting (HID, Fluorescent)
    · Industrial

    ## Absolute Maximum Ratings
    · Drain-Source Voltage (VDS): 650V
    · Gate-Source Voltage (VGS): ±30V
    · Continuous Drain Current (Tc=25°C): 10A
    · Pulsed Drain Current (IDM): 40A
    · Maximum Power Dissipation (PD): 34W
    · Operating/Storage Temperature (TJ, Tstg): -55 to +150°C

    ## Key Specifications (TJ = 25 °C)
    · VDS(breakdown): 650V
    · RDS(on) (VGS=10V, ID=8A): 0.84 Ω
    · Qg (Total Gate Charge): 43 nC
    · Input Capacitance (Ciss): 1200 pF

    ## Package Options
    · TO-220AB
    · TO-220 FULLPAK
    · TO-263AB (High Voltage)

    ## Notes
    · Datasheet includes thermal resistance ratings.
    · Detailed graphs for typical characteristics are provided (Output, Transfer, On-Resistance, Capacitance, Gate Charge, Switching Time, etc.)
    · Dimensions and layout information for each package are available.
    · RoHS and Halogen-free compliant.
    · Disclaimer regarding application suitability is included.

    Part No.10N65G-TA3-T
    ManufacturerVBSEMI
    Size2Mb
    Pages10 pages
    DescriptionN-Channel 6 50V (D-S) Power MOSFET
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