| Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
International Rectifier |
IRHN7450SE
|
111Kb/4P |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
|
|
IRHN7450SE
|
250Kb/8P |
Simple Drive Requirements
|
|
IRHN7450SE
|
250Kb/8P |
Simple Drive Requirements
|
|
IRHN7450
|
658Kb/12P |
Simple Drive Requirements
|
|
IRHN7C50SE
|
110Kb/4P |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
|
|
IRHN2C50SE
|
110Kb/4P |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
|
|
IRHN2C50SE
|
36Kb/4P |
Simple Drive Requirements
|
|
IRHN2C50SE
|
36Kb/4P |
Simple Drive Requirements
|
|
IRHN3054
|
125Kb/8P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
|
IRHN3150
|
284Kb/12P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
|
IRHN3250
|
1Mb/13P |
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology
2022-05-16 |
|
IRHN4054
|
125Kb/8P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
|
IRHN4150
|
284Kb/12P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
|
IRHN4250
|
1Mb/13P |
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology
2022-05-16 |
|
IRHN57250SE
|
176Kb/8P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
|
IRHN57250SE
|
192Kb/8P |
Simple Drive Requirements
|
|
IRHN57250SE
|
192Kb/8P |
Simple Drive Requirements
|
|
IRHN8054
|
125Kb/8P |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
|
|
IRHN8130
|
508Kb/14P |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
|
|
IRHN8150
|
516Kb/14P |
TRANSISTOR N-CHANNEL
|
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