Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Inchange Semiconductor ... |
NDD02N40-1
|
317Kb/2P |
isc N-Channel MOSFET Transistor
|
ON Semiconductor |
NDD02N40T4G
|
108Kb/9P |
N-Channel Power MOSFET
July, 2014 ??Rev. 4 |
SHENZHEN DOINGTER SEMIC... |
NDD02N40T4G
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
ON Semiconductor |
NDD02N60Z
|
146Kb/10P |
N-Channel Power MOSFET 600 V, 4.8
July, 2013 ??Rev. 7 |
Inchange Semiconductor ... |
NDD02N60Z
|
299Kb/2P |
isc N-Channel MOSFET Transistor
|
NDD02N60Z-1
|
318Kb/2P |
isc N-Channel MOSFET Transistor
|
VBsemi Electronics Co.,... |
NDD02N60Z-1G
|
1Mb/9P |
N-Channel 650V (D-S)Power MOSFET
|
ON Semiconductor |
NDD02N60Z-1G
|
148Kb/10P |
N-Channel Power MOSFET
January, 2014 ??Rev. 8 |
NDD02N60Z-1G
|
168Kb/10P |
N-Channel Power MOSFET 600 V, 4.0
April, 2010 ??Rev. 2 |
NDD02N60ZT4G
|
168Kb/10P |
N-Channel Power MOSFET 600 V, 4.0
April, 2010 ??Rev. 2 |
NDD02N60ZT4G
|
148Kb/10P |
N-Channel Power MOSFET
January, 2014 ??Rev. 8 |
VBsemi Electronics Co.,... |
NDD02N60ZT4G
|
1Mb/9P |
N-Channel 650V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
NDD02N60ZT4G
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|