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STM32F479II Folha de dados(PDF) 126 Page - STMicroelectronics

Nome de Peças STM32F479II
Descrição Electrónicos  8- to 14-bit parallel camera interface up to 54 Mbytes
PDF  208 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F479II Folha de dados(HTML) 126 Page - STMicroelectronics

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Electrical characteristics
STM32F479xx
126/208
DocID028010 Rev 2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16
tBE
Bank erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
8-bit program operation
1.7
-
3.6
1. Based on test during characterization.
2. The maximum programming time is measured after 100K erase operations.
Table 51. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
6.9
-
s
tBE
Bank erase time
-
-
6.9
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V
VPP
VPP voltage range
-
7
-
9
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
-
-
1
hour
Table 50. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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