CF745 datasheet(135/217 Pages) MICROCHIP

135 / 217 page

Preliminary

DS30453B-page 135

PIC16C58A

PIC16C5X

16.3

DC Characteristics: PIC16LC58A-04 (Commercial)

PIC16LC58A-04I (Industrial)

PIC16LC58A-04 (Extended)

DC Characteristics

Power Supply Pins

Standard Operating Conditions (unless otherwise speciﬁed)

Operating Temperature

°C ≤ TA ≤ +70°C (commercial)

–40

°C ≤ TA ≤ +85°C (industrial)

–40

°C ≤ TA ≤ +125°C (extended)

Characteristic

Sym

Min

Typ(1) Max Units

Conditions

Supply Voltage

XT, RC and LP options

VDD

2.5

—

6.25

RAM Data Retention Voltage(2)

VDR

—

1.5*

—

Device in SLEEP mode

VDD start voltage to ensure

Power-On Reset

VPOR

—VSS

—

See Section 7.4 for details on

Power-on Reset

VDD rise rate to ensure

Power-On Reset

SVDD

0.05*

—

V/ms See Section 7.4 for details on

Power-on Reset

Supply Current(3)

XT and RC(4) options

LP option, Commercial

LP option, Industrial

LP option, Extended

IDD

—

0.5

2.5

µA

FOSC = 4.0 MHz, VDD = 5.5V

FOSC = 32 kHz, VDD = 2.5V WDT disabled

Power Down Current(5)

Commercial

Industrial

Extended

IPD

—

2.5

0.25

2.5

0.25

2.5

0.25

4.0

5.0

7.0

µA

VDD = 2.5V, WDT enabled

VDD = 2.5V, WDT disabled

VDD = 2.5V, WDT enabled

VDD = 2.5V, WDT disabled

VDD = 2.5V, WDT enabled

VDD = 2.5V, WDT disabled

* These parameters are characterized but not tested.

Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25

°C.This data is for design guidance

only and is not tested.

2: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus

loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on

the current consumption.

a) The test conditions for all IDD measurements in active operation mode are:

OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to

Vss, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as speciﬁed.

b) For standby current measurements, the conditions are the same, except that

the device is in SLEEP mode.

4: Does not include current through Rext. The current through the resistor can be estimated by the

formula: IR = VDD/2Rext (mA) with Rext in k

Ω.

5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is

measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.

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