MTC3588N6 datasheet(2/12 Pages) CYSTEKEC

Nome de Peças	MTC3588N6

Descrição Electrónicos	N- And P-Channel Enhancement Mode Power MOSFET

PDF	12 Pages

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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2 / 12 page

CYStech Electronics Corp.

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date :

Page No. : 2/12

MTC3588N6

CYStek Product Specification

Absolute Maximum Ratings (Ta=25°C)

Limits

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Breakdown Voltage

BVDSS

14

-14

Gate-Source Voltage

VGS

±

8

±

8

V

Continuous Drain Current @TA=25

°C (Note 1)

5.4

-3.6

Continuous Drain Current @TA=70

°C (Note 1)

ID

4.3

-2.9

Pulsed Drain Current (Note 2)

IDM

20

-20

A

PD

1.14

W

Total Power Dissipation (Note 1)

Linear Derating Factor

0.01

W /

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec.

2.

Pulse width limited by maximum junction temperature.

N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

14

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

8

-

mV/

°C Reference to 25°C, ID=1mA

VGS(th)

0.4

-

1.0

V

VDS=VGS, ID=250μA

IGSS

-

±100

nA

VGS=±8V, VDS=0V

-

1

VDS=12V, VGS=0V

IDSS

-

10

μA

VDS=10V, VGS=0V, Tj=70

°C

-

17.6

25

ID=5A, VGS=4.5V

-

24.7

33

ID=4.6A, VGS=2.5V

-

39.5

75

ID=4.1A, VGS=1.8V

*RDS(ON)

-

67.3

115

m

Ω

ID=2A, VGS=1.5V

*GFS

-

5.6

-

S

VDS=5V, ID=3A

Dynamic

Ciss

-

407

-

Coss

-

115

-

Crss

-

100

-

pF

VDS=10V, VGS=0V, f=1MHz

*td(ON)

-

5

-

*tr

-

18.8

-

*td(OFF)

-

49.6

-

*tf

-

30.8

-

ns

VDS=10V, ID=1A, VGS=5V, RG=3.3Ω

*Qg

-

6.5

-

*Qgs

-

0.7

-

*Qgd

-

2.3

-

nC

VDS=10V, ID=3A, VGS=4.5V

Rg

-

1

-

Ω

f=1MHz

Source-Drain Diode

*VSD

-

0.87

1.2

V

VGS=0V, IS=5.2A

*trr

-

12

-

ns

*Qrr

-

2.3

-

nC

IF=3A, VGS=0V, dIF/dt=100A/μs

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