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MTC3588N6 Folha de dados(PDF) 1 Page - Cystech Electonics Corp. |
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MTC3588N6 Folha de dados(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 12 page ![]() CYStech Electronics Corp. Spec. No. : C102N6 Issued Date : 2015.08.13 Revised Date : Page No. : 1/12 MTC3588N6 CYStek Product Specification N- And P-Channel Enhancement Mode Power MOSFET MTC3588N6 N-CH P-CH BVDSS 14V -14V ID @ TA=25 °C 5.4A(VGS=4.5V) -3.6A(VGS=-4.5 V) 17.6mΩ(VGS=4.5V) 45.1mΩ(VGS=-4.5V) 24.7mΩ(VGS=2.5V) 65.6mΩ(VGS=-2.5V) Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTC3588N6-0-T1-G SOT-26 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTC3588N6 SOT-26 G:Gate S:Source D:Drain G1 S2 G2 D1 S1 D2 39.5mΩ(VGS=1.8V) 88.5mΩ(VGS=-1.8V) RDSON(TYP.) 67.3mΩ(VGS=1.5V) 154.3mΩ(VGS=-1.5V) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name |
Nº de peça semelhante - MTC3588N6 |
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Descrição semelhante - MTC3588N6 |
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