MTC3588N6 datasheet(9/12 Pages) CYSTEKEC

Nome de Peças	MTC3588N6

Descrição Electrónicos	N- And P-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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9 / 12 page

CYStech Electronics Corp.

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date :

Page No. : 9/12

MTC3588N6

CYStek Product Specification

P-channel Typical Characteristics(Cont.)

Typical Transfer Characteristics

0

4

8

12

16

20

01

2

34

5

VGS, Gate-Source Voltage(V)

VDS=5V

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

0.001

0.01

0.1

1

10

-ID, Drain Current(A)

Pulsed

Ta=25°C

VDS=-10V

VDS=-5V

Transient Thermal Response Curves

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, Square Wave Pulse Duration(s)

Single Pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=110°C/W

Recommended Soldering Footprint

Nº de peça semelhante - MTC3588N6

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Cystech Electonics Corp...	MTC3588N6-0-T1-G	856Kb / 12P	N- And P-Channel Enhancement Mode Power MOSFET
Cystech Electonics Corp...	MTC3588N6	856Kb / 12P	N- And P-Channel Enhancement Mode Power MOSFET

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Descrição semelhante - MTC3588N6

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Cystech Electonics Corp...	MTC3588N6	856Kb / 12P	N- And P-Channel Enhancement Mode Power MOSFET
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