MTC3588N6 datasheet(8/12 Pages) CYSTEKEC

Nome de Peças	MTC3588N6

Descrição Electrónicos	N- And P-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date :

Page No. : 8/12

MTC3588N6

CYStek Product Specification

P-channel Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

100

1000

0.1

1

10

-VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1.0

1.2

1.4

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=-250μA

Single Pulse Power Rating, Junction to Ambient

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

Pulse Width(s)

TJ(MAX)=150°C

TA=25°C

RθJA=110°C/W

Gate Charge Characteristics

0

2

4

6

8

10

02468

10

12

14

16

Qg, Total Gate Charge(nC)

VDS=-10V

ID=-2A

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.01

0.1

1

10

100

-VDS, Drain-Source Voltage(V)

DC

10ms

100m

1ms

100

μs

RDS(ON)

Limited

TA=25°C, Tj=150°C,

VGS=-4.5V, RθJA=110°C/W

Single Pulse

Maximum Drain Current vs JunctionTemperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

25

50

75

100

125

150

175

Tj, Junction Temperature(°C)

TA=25°C, VGS=-4.5V, RθJA=110°C/W

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