MTC3588N6 datasheet(7/12 Pages) CYSTEKEC

Nome de Peças	MTC3588N6

Descrição Electrónicos	N- And P-Channel Enhancement Mode Power MOSFET

PDF	12 Pages

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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7 / 12 page

CYStech Electronics Corp.

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date :

Page No. : 7/12

MTC3588N6

CYStek Product Specification

P-channel Typical Characteristics

Typical Output Characteristics

0

4

8

12

16

20

012

345

-VDS, Drain-Source Voltage(V)

-VGS=2.5V

-VGS=2V

-VGS=3V

5V, 4V

-

Brekdown Voltage vs Ambient Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

ID=-250μA,

VGS=0V

Static Drain-Source On-State resistance vs Drain Current

10

100

1000

0.01

0.1

1

10

-ID, Drain Current(A)

VGS=-1.8V

VGS=-1.5V

VGS=-2.5V

VGS=-4.5V

Reverse Drain Current vs Source-Drain Voltage

0.2

0.4

0.6

0.8

1.0

1.2

02

46

8

1

-IDR, Reverse Drain Current (A)

0

Tj=25°C

Tj=150°C

VGS=0V

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

0

50

100

150

200

250

300

01234567

8

-VGS, Gate-Source Voltage(V)

ID=-3.6A

Drain-Source On-State Resistance vs Junction Tempearture

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-75 -50 -25

0

25

50

75 100 125 150 175

Tj, Junction Temperature(°C)

VGS=-4.5V, ID=-3.6A

RDS(ON)@Tj=25°C : 45.1mΩ typ.

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MTC3588N6 Folha de dados(PDF) 7 Page - Cystech Electonics Corp.

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