MTC3588N6 datasheet(3/12 Pages) CYSTEKEC

Nome de Peças	MTC3588N6

Descrição Electrónicos	N- And P-Channel Enhancement Mode Power MOSFET

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Fabricante Electrônico	CYSTEKEC [Cystech Electonics Corp.]

Página de início	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date :

Page No. : 3/12

MTC3588N6

CYStek Product Specification

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

-14

-

V

VGS=0V, ID=-250μA

∆BVDSS/∆Tj

-

-5

-

mV/

°C Reference to 25°C, ID=-1mA

VGS(th)

-0.4

-

-1.0

V

VDS=VGS, ID=-250μA

IGSS

-

±100

nA

VGS=±8V, VDS=0V

-

-1

VDS=-12V, VGS=0V

IDSS

-

-10

μA

VDS=-10V, VGS=0, Tj=70

°C

-

45.1

60

ID=-3.6A, VGS=-4.5V

-

65.6

87

ID=-3.2A, VGS=-2.5V

-

88.5

178

ID=-1A, VGS=-1.8V

*RDS(ON)

-

154.3

305

m

Ω

ID=-1A, VGS=-1.5V

*GFS

-

5.6

-

S

VDS=-5V, ID=-2A

Dynamic

Ciss

-

561

-

Coss

-

153

-

Crss

-

142

-

pF

VDS=-10V, VGS=0V, f=1MHz

*td(ON)

-

5

-

*tr

-

18.8

-

*td(OFF)

-

49.6

-

*tf

-

30.8

-

ns

VDS=-10V, ID=-1A, VGS=-5V, RG=3.3Ω

*Qg

-

8

-

*Qgs

-

1

-

*Qgd

-

2.8

-

nC

VDS=-10V, ID=-2A, VGS=-4.5V

Rg

-

9.3

-

Ω

f=1MHz

Source-Drain Diode

*VSD

-

-0.9

-1.2

V

VGS=0V, IS=-3.4A

*trr

-

27

-

ns

*Qrr

-

7

-

nC

IF=-2A, VGS=0V, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

RθJC

80

Thermal Resistance, Junction-to-ambient, max

RθJA

110 (Note )

°C/W

Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180

°C/W when mounted on minimum copper pad

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