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STM32F205RB Folha de dados(PDF) 115 Page - STMicroelectronics |
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STM32F205RB Folha de dados(HTML) 115 Page - STMicroelectronics |
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115 / 163 page ![]() STM32F205xx, STM32F207xx Electrical characteristics Doc ID 15818 Rev 7 115/163 INL(3) Integral non linearity (difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 1023) -- ±1 LSB Given for the DAC in 10-bit configuration. -- ±4 LSB Given for the DAC in 12-bit configuration. Offset(3) Offset error (difference between measured value at Code (0x800) and the ideal value = VREF+/2) -- ±10 mV Given for the DAC in 12-bit configuration -- ±3 LSB Given for the DAC in 10-bit at VREF+ = 3.6 V -- ±12 LSB Given for the DAC in 12-bit at VREF+ = 3.6 V Gain error(3) Gain error - - ±0.5 % Given for the DAC in 12-bit configuration tSETTLING (3) Settling time (full scale: for a 10-bit input code transition between the lowest and the highest input codes when DAC_OUT reaches final value ±4LSB -3 6 µs CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ THD(3) Total Harmonic Distortion Buffer ON -- - dB CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ Update rate(2) Max frequency for a correct DAC_OUT change when small variation in the input code (from code i to i+1LSB) -- 1 MS/s CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ tWAKEUP (3) Wakeup time from off state (Setting the ENx bit in the DAC Control register) -6.5 10 µs CLOAD ≤ 50 pF, RLOAD ≥ 5 kΩ input code between lowest and highest possible ones. PSRR+ (2) Power supply rejection ratio (to VDDA) (static DC measurement) - –67 –40 dB No RLOAD, CLOAD = 50 pF 1. If IRROFF is set to VDD, this value can be lowered to 1.65 V when the device operates in a reduced temperature range. 2. Guaranteed by design, not tested in production. 3. Guaranteed by characterization, not tested in production. Table 63. DAC characteristics (continued) Symbol Parameter Min Typ Max Unit Comments |
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