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STM32L4P5CE Folha de dados(PDF) 189 Page - STMicroelectronics

Nome de Peças STM32L4P5CE
Descrição Electrónicos  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
PDF  311 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STM32L4P5CE Folha de dados(HTML) 189 Page - STMicroelectronics

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DS12903 Rev 2
189/311
STM32L4P5xx
Electrical characteristics
277
6.3.8
Internal clock source characteristics
The parameters given in Table 59 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 21: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 59. HSI16 oscillator characteristics(1)
1. Guaranteed by characterization results.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TJ=30 °C
15.88
-
16.08 MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2)
2. Guaranteed by design.
Duty Cycle
-
45
-
55
%
∆Temp(HSI16)
HSI16 oscillator frequency
drift over temperature
TJ= 0 to 85 °C
-1
-
1
%
TJ= -40 to 125 °C
-2
-
1.5
%
∆VDD(HSI16)
HSI16 oscillator frequency
drift over VDD
VDD=1.71 V to 3.6 V
-0.1
-
0.05
%
tsu(HSI16)(2)
HSI16 oscillator start-up
time
--
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
--
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
--
155
190
μA



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