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STM32L433CBU3P Folha de dados(PDF) 135 Page - STMicroelectronics

Nome de Peças STM32L433CBU3P
Descrição Electrónicos  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 256KB flash, 64KB SRAM, USB FS, LCD, ext. SMPS
PDF  227 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STM32L433CBU3P Folha de dados(HTML) 135 Page - STMicroelectronics

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DS11449 Rev 7
135/19
STM32L433xx
Electrical characteristics
194
6.3.8
Internal clock source characteristics
The parameters given in Table 58 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 58. HSI16 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TA=30 °C
15.88
-
16.08
MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2) Duty Cycle
-
45
-
55
%
∆Temp(HSI16)
HSI16 oscillator frequency
drift over temperature
TA= 0 to 85 °C
-1
-
1
%
TA= -40 to 125 °C
-2
-
1.5
%
∆VDD(HSI16)
HSI16 oscillator frequency
drift over VDD
VDD=1.62 V to 3.6 V
-0.1
-
0.05
%
tsu(HSI16)(2)
HSI16 oscillator start-up
time
--
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
--
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.



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